Electro-chemical deposition cell for face-up processing of single semiconductor substrates

ABSTRACT

An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.

CROSS REFERENCE TO RELATED APPLICATION

[0001] This application is a continuation of co-depending U.S. patentapplication Ser. No. 09/294,240, filed on Apr. 19, 1999, which claimsthe benefit of U.S. Provisional Application Serial No. 60/082,494, filedon Apr. 21, 1998. Each of the aforementioned related patent applicationsis incorporated by reference herein.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention generally relates to deposition of a metallayer onto a substrate. More particularly, the present invention relatesto electroplating a metal layer onto a substrate.

[0004] 2. Background of the Related Art

[0005] Sub-quarter micron multi-level metallization is one of the keytechnologies for the next generation of ultra large scale integration(ULSI). The multilevel interconnects that lie at the heart of thistechnology require planarization of interconnect features formed in highaspect ratio apertures, including contacts, vias, lines and otherfeatures. Reliable formation of these interconnect features is veryimportant to the success of ULSI and to the continued effort to increasecircuit density and quality on individual substrates and die.

[0006] As circuit densities increase, the widths of vias, contacts andother features, as well as the dielectric materials between them,decrease to less than 250 nanometers, whereas the thickness of thedielectric layers remains substantially constant, with the result thatthe aspect ratios for the features, i.e., their height divided by width,increases. Many traditional deposition processes have difficulty fillingstructures where the aspect ratio exceed 4:1, and particularly where itexceeds 10:1. Therefore, there is a great amount of ongoing effort beingdirected at the formation of void-free, nanometer-sized features havinghigh aspect ratios wherein the ratio of feature height to feature widthcan be 4:1 or higher. Additionally, as the feature widths decrease, thedevice current remains constant or increases, which results in anincreased current density in the feature.

[0007] Elemental aluminum (Al) and its alloys have been the traditionalmetals used to form lines and plugs in semiconductor processing becauseof aluminum's perceived low electrical resistivity, its superioradhesion to silicon dioxide (SiO2), its ease of patterning, and theability to obtain it in a highly pure form. However, aluminum has ahigher electrical resistivity than other more conductive metals such ascopper, and aluminum also can suffer from electromigration phenomena.Electromigration is believed to be the motion of ions of a metalconductor in response to the passage of high current through it, and itis a phenomenon that occurs in a metal circuit while the circuit is inoperation, as opposed to a failure occurring during fabrication.Electromigration can lead to the formation of voids in the conductor. Avoid may accumulate and/or grow to a size where the immediatecross-section of the conductor is insufficient to support the quantityof current passing through the conductor, leading to an open circuit.The area of conductor available to conduct heat therealong likewisedecreases where the void forms, increasing the risk of conductorfailure. This problem is sometimes overcome by doping aluminum withcopper and with tight texture or crystalline structure control of thematerial. However, electromigration in aluminum becomes increasinglyproblematic as the current density increases.

[0008] Copper and its alloys have lower resistivities than aluminum andsignificantly higher electromigration resistance as compared toaluminum. These characteristics are important for supporting the highercurrent densities experienced at high levels of integration and increasedevice speed. Copper also has good thermal conductivity and is availablein a highly pure state. Therefore, copper is becoming a choice metal forfilling sub-quarter micron, high aspect ratio interconnect features onsemiconductor substrates.

[0009] Despite the desirability of using copper for semiconductor devicefabrication, choices of fabrication methods for depositing copper intovery high aspect ratio features, such as a 10:1 aspect ratio, 0.1 micronwide vias are limited. Precursors for CVD deposition of copper areill-developed, and physical vapor deposition into such features producesunsatisfactory results because of voids formed in the features.

[0010] As a result of these process limitations, plating which hadpreviously been limited to the fabrication of lines on circuit boards,is just now being used to fill vias and contacts on semiconductordevices. Metal electroplating in general is well known in the art andcan be achieved by a variety of techniques. However, a number ofobstacles impair consistent reliable electroplating of copper ontosemiconductor substrates having nanometer-sized, high aspect ratiofeatures. Generally, these obstacles deal with providing uniform powerdistribution and current density across the substrate plating surface toform a metal layer having uniform thickness.

[0011] Present designs of cells for electroplating a metal onsemiconductor substrates are based on a fountain plater configuration.FIG. 1 is a cross sectional view of a simplified fountain plater.Generally, the fountain plater 10 includes an electrolyte container 12having a top opening, a substrate holder 14 disposed above theelectrolyte container 12, an anode 16 disposed at a bottom portion ofthe electrolyte container 12 and a cathode 20 contacting the substrate18. The cathode 20 comprises a plurality of contact pins distributedabout the peripheral portion of the substrate 18 to provide a bias aboutthe perimeter of the substrate. The contact pins generally provide ahigher current density near the contact points on the substrate surface,resulting in a non-uniform deposition on the substrate surface. Thesemiconductor substrate 18 is positioned a fixed distance above thecylindrical electrolyte container 12, and the electrolyte impingesperpendicularly on the substrate plating surface. Because of thedispersion effects of the electrical current at the exposed edges of thesubstrate 18 and the non-uniform flow of the electrolyte, the fountainplater 10 provides non-uniform current distribution, particularly at theregion near the edges and at the center of the substrate 18 that resultsin non-uniform plating of the metal. The electrolyte flow uniformity atthe center of the substrate 18 can be improved by rotating the substrate18. However, the plating uniformity still deteriorates as the boundariesor edges of the substrate are approached.

[0012] Furthermore, the fountain plater 10 presents additionaldifficulties in substrate transfers because the substrate has to beflipped for face-down plating. Generally, substrates are transferred byrobots having robot blades with a substrate supporting surface, and thesubstrates are transferred with the surface to be processed face-up.Preferably, the robot blade does not contact the surface to be processedto eliminate risk of damaging the substrate surface. Because thefountain plater 10 requires face-down processing, additional devices arerequired to flip the substrate from a face-up transferring position to aface-down processing position.

[0013] Therefore, there remains a need for a reliable, consistent copperelectroplating technique to deposit and form copper layers onsemiconductor substrates having nanometer-sized, high aspect ratiofeatures. There is also a need for a face-up electroplating system thatallows fast substrate processing and increases throughput. Furthermore,there is a need for an apparatus for delivering a uniform electricalpower distribution to a substrate surface and a need for anelectroplating system that provides uniform deposition on the substratesurface.

SUMMARY OF THE INVENTION

[0014] The invention generally provides an apparatus and a method forelectro-chemically depositing a uniform metal layer onto a substrate.More specifically, the invention provides an electro-chemical depositioncell for face-up processing of semiconductor substrates comprising asubstrate support member, a cathode connected to the substrate platingsurface, an anode disposed above the substrate support member and anelectroplating solution inlet supplying an electroplating solutionfluidly connecting the anode and the substrate plating surface.Preferably, the anode comprises a consumable metal source disposed in aliquid permeable structure, and the anode and a cavity ring define acavity for holding and distributing the electroplating solution to thesubstrate plating surface.

[0015] The invention also provides a substrate support member forface-up electro-plating. Preferably, the substrate support membercomprises a vacuum chuck having vacuum ports disposed on the substratesupporting surface that serves to provide suction during processing andto provide a blow-off gas flow to prevent backside contamination duringsubstrate transfers. The substrate support member also rotates andvibrates during processing to enhance the electro-deposition onto thesubstrate plating surface.

[0016] Another aspect of the invention provides a dual catch-cup systemcomprising an electroplating solution catch-cup and a rinse catch-cup.The dual catch-cup system provides separation of the electroplatingsolution and the rinse solutions during processing and providesre-circulating systems for the different solutions of the electroplatingsystem.

[0017] The invention also provides an apparatus for deliveringelectrical power to a substrate surface comprising an annular ringelectrically connected to a power supply, the annular ring having acontact portion to electrically contact a peripheral portion of thesubstrate surface. Preferably, the contact portion comprises annularsurface, such as a metal impregnated elastomer ring, to providecontinuous or substantially continuous electrical contact with theperipheral portion of the substrate. The invention provides a uniformdistribution of power to a substrate deposition surface by providing auniform current density across the substrate deposition surface throughthe continuous annular contact portion. The invention also preventsprocess solution contamination of the backside of the substrate byproviding a seal between the contact portion of the annular ring and thesubstrate deposition surface.

[0018] Another aspect of the invention provides an apparatus for holdinga substrate for electro-chemical deposition comprising a substrateholder having a substrate support surface and an annular ringelectrically connected to a power supply, the annular ring having acontact portion to electrically contact a peripheral portion of thesubstrate surface. The substrate holder is preferably connected to oneor more actuators that provide rotational movement and/or vibrationalagitation to the substrate holder during processing to enhancedeposition uniformity. Preferably, the substrate holder comprises avacuum chuck having a substrate supporting surface, and an O-ring isdisposed around a substrate supporting surface to seal the backside ofthe substrate from contamination by the processing solutions.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] So that the manner in which the above recited features,advantages and objects of the present invention are attained can beunderstood in detail, a more particular description of the invention,briefly summarized above, may be had by reference to the embodimentsthereof which are illustrated in the appended drawings.

[0020] It is to be noted, however, that the appended drawings illustrateonly typical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

[0021]FIG. 1 is a cross sectional view of a simplified fountain plater.

[0022]FIG. 2 is a partial cut-away perspective view of anelectro-chemical deposition cell showing the interior components of theelectro-chemical deposition cell.

[0023]FIG. 3 is a cross sectional schematic view of an electro-chemicaldeposition cell 200 showing a robot blade transferring a substrate 202into the electro-chemical deposition cell 200.

[0024]FIG. 4 is a cross sectional schematic view of an electro-chemicaldeposition cell 200 having a substrate 202 disposed on a substratesupport member 204 in a processing position according to the invention.

[0025]FIG. 5 is a cross sectional view of a substrate support member 204in a transferring position having a substrate disposed on elevated liftpins.

[0026]FIG. 6 is a cross sectional view of an alternative embodiment ofthe substrate support member 204 showing two separate fluid conduits anddual level lip seals.

[0027]FIG. 7 is a bottom perspective view of a cathode clamp ring havingan alternative embodiment of the contact portion comprising a pluralityof contact pads.

[0028]FIG. 8 is a partial cross sectional schematic view of anotherembodiment of a cathode clamp ring.

[0029]FIG. 9 is a cross sectional partial view of a cathode clamp ringshowing another embodiment of a contact portion of the clamp ring.

[0030]FIG. 10 is a see-through perspective of a section of an embodimentof a metal impregnated elastomer ring 350.

[0031]FIG. 11 is a top view of an electroplating solution catch cup 246.

[0032]FIG. 12 is a cross sectional schematic view of an electro-chemicaldeposition cell 200 showing one embodiment of the anode/cavity ringassembly for drip control where a substrate support member 204 is shownpositioned in a rinsing position according to the invention.

[0033]FIG. 13 is a top view of a shutter plate 238 positioned abovecathode clamp ring 210, showing an alternative solution for controllingthe dripping of residual electroplating solutions from the anode/cavityring assembly.

[0034]FIG. 14 is a side view of an electro-chemical deposition cellhaving a sub-chamber for the anode/cavity ring assembly.

[0035]FIG. 15 is a bottom view of an electroplating solution catch cup246 showing three rinse spouts 260 disposed on a bottom surface of theelectroplating solution catch cup 246.

[0036]FIG. 16 is a top view of a rinse catch cup 264.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0037] The invention generally provides an electro-chemical depositioncell wherein a substrate is positioned with a deposition surface “faceup.” An electroplating solution is pumped through a top portion of thecell over the exposed substrate deposition surface and collected in aperipheral catch cup drain about the perimeter of the substrate.Additionally, the cell includes means for in situ cleaning and/orrinsing of the electro-chemically deposited substrate.

[0038]FIG. 2 is a partial cut-away perspective view of anelectro-chemical deposition cell showing the interior components of theelectro-chemical deposition cell. Generally, the electro-chemicaldeposition cell 200 comprises a substrate support member 204, a cathodeclamp ring 210, an anode plate 230 above the cathode clamp ring 210 andan electroplating solution inlet 240 supplying an electroplatingsolution into the electro-chemical deposition cell 200 above thesubstrate or in the flow direction of the substrate surface to beplated.

[0039] The electro-chemical deposition cell 200 includes a cellenclosure 100 comprising an enclosure lid 102, an enclosure side wall104 and an enclosure bottom 106. Preferably, the enclosure 100 has acylindrical interior and is made of an electrically insulative material.The enclosure side wall 104 includes a slit opening 280 for transfer ofsubstrates into and out of the electro-chemical deposition cell 200, anda slit valve 282 disposed on an outer surface of the enclosure side wall104 opens only during the substrate transfer operation and covers theslit opening 280 during processing to provide a sealed processingenvironment. A drip awning 284 is preferably disposed above the slitopening 280, extending inwardly from an inner surface of the enclosureside wall 104, to guard the opening 280 from direct receipt of theelectroplating solution and thus prevent a processing solution fromleaking out of the cell through the slit opening 280.

[0040] Referring to FIG. 3, where the electro-chemical deposition cell200 is shown with the substrate support member 204 in a load/transferposition, as well as FIG. 4, where the electro-chemical deposition cell200 is shown in a plating/processing position, the anode plate 230 isdisposed within a cavity ring 236 at a top portion of theelectro-chemical deposition cell 200. The anode plate 230 iselectrically connected to a power supply 90. The substrate supportmember 204 is disposed at a bottom portion of the electro-chemicaldeposition cell 200. The cathode clamp ring 210, preferably supported byan annular electroplating solution catch cup 246, is disposed in amiddle portion of the electro-chemical deposition cell 200 between thesubstrate support member 204 and the anode plate 230. The cathode clampring 210 is positioned in the electro-chemical deposition cell 200 suchthat the movement of the substrate support member 204 from theload/transfer position (FIG. 3) to the processing position (FIG. 4)lifts the cathode clamp ring 210 slightly off the annular electroplatingsolution catch cup 246. Once in the processing position, anelectroplating solution pump 92, which is connected to theelectroplating solution inlet 240, pumps the electroplating solutionfrom an electroplating solution reservoir 94 into the electro-chemicaldeposition cell 200. Preferably, an electroplating solution outlet 258is connected to an electroplating solution drain 244 on theelectroplating solution catch cup 246 to return the electroplatingsolution back to the electroplating solution reservoir 94 to bere-circulated through the electro-chemical deposition cell 200.

[0041]FIG. 3 is a cross sectional schematic view of an electro-chemicaldeposition cell 200 showing a robot blade 88 transferring a substrate202 into the electro-chemical deposition cell 200, and FIG. 5 is a crosssectional schematic view of a substrate support member 204 in atransferring position according to the invention. By comparing FIGS. 2Aand 3A, the sequence for loading and unloading a substrate may be seen.Referring initially to FIG. 3, a robot blade 88 transfers a substrate202 into the electro-chemical deposition cell 200 through the slitopening 280 and positions the substrate 202 above the substrate supportmember 204. At the substrate transferring position, the substratesupport member 204 is retracted fully to a bottom portion of theelectro-chemical deposition cell 200. Then, as shown in FIG. 5, aplurality of lift pins 322 extend through vertical bores 324 in thesubstrate support member 204 and lift the substrate 202 above the robotblade 88. The robot blade 88 then retracts out of the chamber, and theslit valve 282 closes the slit opening 280.

[0042] Referring to FIG. 5, the substrate support member 204 comprises avacuum chuck 290 made of an insulating material and a conductive baseplate 292 providing a cathode connection to the cathode clamp ring 210.The vacuum chuck 290 secures a substrate 202 onto a substrate supportingsurface 206 on the substrate support member 204 during processing.Preferably, one or more vacuum ports 294 are disposed in the substratesupport member 204 and are connected to one or more vacuum channels 296disposed on the substrate supporting surface 206 to secure the substrate202 through vacuum suction. The vacuum channels 296 are generallydisposed evenly across the surface of the substrate member in a web-likefashion (as shown in FIG. 2).

[0043] An outer seal 298, comprising an O-ring, or alternatively, adouble O-ring, disposed in a recess 300 surrounding the substratesupporting surface 206 is provided to create a vacuum seal between abackside 215 of the substrate 202 and the substrate supporting surface206 when the vacuum chuck 290 is activated. The outer seal 298 alsoprovides a seal against substrate backside contamination by theelectroplating solution and other processing solutions. Eliminating thesubstrate backside contamination eliminates the need for a postdeposition backside cleaning process, thus reducing system cost andcomplexity.

[0044] To provide a vacuum passage to the substrate supporting surface206, a vacuum conduit 302 within the vacuum chuck 290 connects thevacuum ports 294 and vacuum channels 296 to a central vacuum conduit 304within a rotating shaft 306. The rotating shaft 306 extends through ashaft sleeve 308 and is connected to a rotary actuator 310 disposed on aplatform 342. The shaft sleeve 308 is also disposed on the platform 342to maintain a fixed vertical relationship with the rotating shaft 306. Aset of lip seals 314 disposed between the rotating shaft 306 and theshaft sleeve 308 allows free rotational movement of the rotating shaft306 within the shaft sleeve 308 while providing a sealed region 316between an outer surface of the rotating shaft 306 and an inner surfaceof the shaft sleeve 308. The central vacuum conduit 304 includes anopening 312 fluidly connecting the central vacuum conduit 304 and thesealed region 316. A vacuum outlet 318 extends through the shaft sleeve308 and fluidly connects to the sealed region 316. A vacuum pump 360 isconnected to the vacuum outlet 318 to provide a vacuum suction throughthe vacuum outlet 318, the sealed region 316, the opening 312, thecentral vacuum conduit 304, the vacuum conduit 302, the vacuum ports 294and the vacuum channels 296 to hold the substrate 202 on the substratesupport surface 206.

[0045] To provide a positive pressure between the substrate and thesubstrate support member 204, a gas pump 370 connected to a gas supply372 is selectively connected through a control valve 374 to the vacuumoutlet 318 to supply a blow off gas to the vacuum ports 294. The blowoff gas prevents leftover rinsing agent from contaminating the backsideof the processed substrate when the substrate is lifted above thesubstrate support member 204 and transferred out of the electro-chemicaldeposition cell 200. The control valve 374 shuts the connection to thevacuum pump 360 when the gas pump 370 is activated to pump the blow-offgas to the vacuum ports 294, and the control valve 274 shuts theconnection to the gas supply 372 and the gas pump 370 when the vacuumpump 360 is activated to hold the substrate 202 on the support member204. The vacuum ports 294 direct the blow off gas toward the backsideedge of the substrate 202 to prevent any leftover rinsing agent fromreaching the backside 215 of the substrate 202.

[0046]FIG. 6 is a cross sectional view of an alternative embodiment ofthe substrate support member 204 showing two separate fluid conduits anddual level lip seals. Although the following describes a fluid deliverysystem for two separate fluids, the fluid delivery system may be adaptedto accommodate a number of separate fluids by increasing the number offluid conduits and lips seals. The embodiment as shown in FIG. 6provides a substrate support member 204 capable of rotating whiledelivering two separate fluids through separate fluid conduits to thesubstrate support surface 206. Preferably, two separate sets of fluidchannels 396A, 396B and fluid ports 394A, 394B are disposed on thesubstrate supporting surface 214, and two sets of fluid conduits 402A,402B within the vacuum chuck are connected to two sets of central fluidconduits 404A, 404B extending through the rotating shaft 306. The firstcentral fluid conduit 404A includes a first opening 412A fluidlyconnecting the first central fluid conduit 404A and a first sealedregion 416A sealed by a first set of lip seals 414A. A first fluid inlet418A extends through the shaft sleeve 308 and fluidly connects to thefirst seal region 416A. A first fluid supply 420A is connected to thefirst fluid inlet 418A through a first pump 422A. Likewise, the secondcentral fluid conduit 404B includes a second opening 412B fluidlyconnecting the second central fluid conduit 404B and a second sealedregion 416B sealed by a second set of lip seals 414B. A second fluidinlet 418B extends through the shaft sleeve 308 and fluidly connects tothe second seal region 416B. A second fluid supply 420B is connected tothe second fluid inlet 418B through a second pump 422B. The sets of lipseals 414A. 414B disposed between the rotating shaft 306 and the shaftsleeve 308 allows free rotational movement of the rotating shaft 306within the shaft sleeve 308 while providing the sealed regions 416A,416B between an outer surface of the rotating shaft 306 and an innersurface of the shaft sleeve 308. Thus, two separate fluids can besimultaneously delivered to the substrate supporting surface 214 whilethe substrate support member 204 is rotated. Alternatively, one of thepumps 422A and 422B is substituted with a vacuum pump to provideseparate routes of vacuum suction and gas delivery to the substratesupporting surface 214. As another alternative, both of the gas pumps422A and 422B may be substituted with two vacuum pumps to providedifferential vacuum regions at the substrate supporting surface 214.Furthermore, more than two vacuum or fluid pumps may be used dependingon the processing requirement. Although each sealed region describedabove preferably uses one set of lip seals (i.e., two lip seals), asubsequent sealed region (i.e., other than the first sealed region)requires only one additional lip seal. For example, three lip seals cancreate two sealed regions, one between the first lip seal and the secondlip seal and another between the second lip seal and the third lip seal.

[0047] Referring back to FIG. 5, the rotating shaft 306 extends througha lift pin platform 320 having a plurality of lift pins 322 disposedthereon. The lift pins 322, preferably a set of four, extend throughbores 324 through the substrate support member 204 to lift a substrate202 above the substrate support surface 206. A lift platform actuator326 moves the lift pin platform 320 vertically to lift and lower asubstrate 202 for transfer into and out of the electro-chemicaldeposition cell 200. Preferably, the lift platform actuator 326 isdisposed on an outer surface of the shaft sleeve 308 and includes a pushrod 327 to actuate movement of the lift pin platform 320. To elevate thelift pin platform 320, the lift platform actuator 326 extends the pushrod 327 to contact a bottom surface of the lift pin platform 320 andpush the lift pin platform 320 upwards. To lower the lift pin platform320, the lift platform actuator 326 retracts the push rod 327 todisengage the lift pin platform 320. When the push rod 327 of the liftplatform actuator 326 is fully retracted, the push rod 327 does notcontact the lift pin platform 320, and the lift pin platform 320 restson a platform ridge 329 extending from an outer surface of the rotatingshaft 306 above the shaft sleeve 308.

[0048] One or more vertical tabs 328 extend from an upper portion of theouter surface of the rotating shaft 306 into one or more matchingvertical grooves 330 in the lift pin platform 320 so that the lift pinplatform 320 rotates in unison with the rotating shaft 306. The tabs 328also guide the lift pin platform 320 vertically when the lift pinplatform is being moved by the lift platform actuator 326.

[0049] A flexible bellow 332, preferably made of polyethylene, isdisposed around each lift pin 322 to provide a splash seal againstelectroplating solutions, rinsing solutions and other process chemicals.The flexible bellow 332 is attached from a top surface of the lift pinplatform 320 to a bottom surface of the conductive base plate 292 of thesubstrate support member 204. The flexible bellow 332 compresses whenthe lift pin platform 320 is elevated by the lift platform actuator 326and stretches when the lift pin platform 320 is resting on the platformridge 329. Each flexible bellow 332 also maintains a seal when subjectedto a slight side load, such as when the substrate support memberrotationally accelerates or decelerates.

[0050] To prevent electroplating solutions, rinsing solutions and otherprocess chemicals from contacting components disposed in the centralportion of the electro-chemical deposition cell 200, such as the liftplatform actuator 326 and the shaft sleeve 308, a splash guard 333 isattached to an outer portion of a lower surface of the lift pin platform320. The splash guard 333 includes a cylindrical downward extension 334that is disposed radially outward of an upwardly extending innercontainer wall 336. The inner container wall 336 is a cylindrical upwardextension from the enclosure bottom 106 of the electro-chemicaldeposition cell 200 that holds the process solutions to be pumped out ofthe system through the outlet 259. The splash guard 334 and the innercontainer wall 336 create a sufficient overlap so that when the lift pinplatform 320 is raised to it highest position during processing, thereis still an overlap between the tip of the splash guard 334 and the tipof the inner container wall 336 (as shown in FIG. 4).

[0051] To provide rotational movement to the substrate support member204, a rotary actuator 310 is disposed on a platform 342 and connectedto the rotating shaft 306. The rotary actuator 310 rotates the rotatingshaft 306 freely within the shaft sleeve 308. To move the substratesupport member 204 vertically, an actuator 346 extends and retracts ashaft 344 connected to the platform 342. The actuator 346 is disposedoutside of the enclosure 100 on the enclosure bottom 106, and the shaft344 extends through the enclosure bottom 106 and is attached to a bottomsurface of the platform 342. To maintain a fixed vertical relation withthe rotating shaft 306 when the substrate support member 204 is elevatedand lowered in the electro-chemical deposition cell 200, the shaftsleeve 308 is also disposed on the platform 342. Preferably, theactuator 346 also provides a vibrational agitation to the substratesupport member 204 to enhance deposition onto the substrate depositionsurface 214. Alternatively, a vibrator (not shown) can be attached tothe substrate support member 204 to provide the vibrational agitation.

[0052] Referring to FIG. 3 and FIG. 4, the structure, operation andpositioning of a cathode clamp ring 210 and an electroplating solutioncatch cup 246 will be discussed. The catch cup 246 is an annularstructure extending inwardly from the enclosure side wall 104 of theelectro-chemical deposition cell 200 to a bottom surface 220 of thecathode clamp ring 210. The cathode clamp ring 210 preferably includesan outer portion having a downwardly sloping surface 256 that overlapsan inner terminus 250 of the catch cup 246 to assist the electroplatingsolution flow into the catch cup 246. The inner terminus 250 includes aridge 252 corresponding to a recess 254 on the bottom surface 220 of thecathode clamp ring 210. The ridge 252 supports the cathode clamp ring210 when the substrate support member 204 is not engaged in a depositionposition. When the substrate support member is engaged in the depositionposition as shown in FIG. 4, the cathode clamp ring 210 is lifted fromthe ridge 252 and is supported on the substrate deposition surface 214.

[0053] The electrical power is delivered by the cathode clamp ring 210to the substrate deposition surface 214 through a contact portion 208 ofthe cathode clamp ring 210. To provide electrical power to the cathodeclamp ring 210, one or more cathode contacts 216 are fixedly secured toa bottom surface 218 of the conductive base plate 292 of the substratesupport member 204 and extends radially outwardly to electricallycontact a bottom surface 220 of the cathode clamp ring 210. Theelectrical power is conducted through the rotating shaft 306 to theconductive base plate 292, then through one or more cathode contacts 216secured onto the conductive base plate 292, and then to a bottom surface220 of the cathode clamp ring 210. Preferably, the cathode contact 216comprises a spring loaded metal strip that maintains constant electricalcontact with the bottom surface 220 of the cathode clamp ring 210 duringprocessing when the substrate support member 204 is rotated and/orvibrated. Alternatively, the cathode clamp ring 210 is fixedly connectedto the power supply through connection wires (not shown).

[0054] To provide electrical power to the cathode clamp ring 210 whilerotating the substrate support member 204 and the rotating shaft 306, arotating cathode connection 340 is disposed at a top portion of theshaft sleeve 308 and connected to the power source 90. The rotatingshaft 306 preferably comprises an electrically conductive material, andthe rotating cathode connection 340 movably contacts the outer surfaceof the rotating shaft 306 to maintain electrical conduction to therotating shaft 306 while the rotating shaft 306 is rotating. Therotating cathode connection 340 preferably comprises a plurality ofconductive ball bearings 341 disposed between a pair of ring seals 343.Preferably, the rotating cathode connection 340 is filled with mercuryto enhance the electrical conductivity of the rotating cathodeconnection 340 while the rotating shaft 306 is rotated.

[0055] Preferably, the cathode clamp ring 210 comprises an annularconductive member having a central opening defining the deposition areaon a substrate deposition surface that is exposed to the electroplatingsolution during processing. The cathode clamp ring 210 is electricallyconnected to the power source 90 through the cathode contacts 216 andthe substrate support member 204 and includes a contact portion 208 toelectrically contact the substrate deposition surface 214 and to providean electrical power (voltage and current) to the substrate depositionsurface 214 to enable the electro-chemical deposition process. Thecontact portion 208 preferably extends a minimal radial distance inwardabove a perimeter edge 212 of the substrate 202, but a distancesufficient to electrically contact a metal seed layer on the substratedeposition surface 214. Preferably, the contact portion 208 includes anannular surface providing a continuous contact around a peripheralportion of the substrate deposition surface 214. By providing acontinuous electrical interface between the cathode and the substratedeposition surface, the electrical power is uniformly distributed on thesubstrate deposition surface 214. The increase in the electricalinterface, as compared to an individual contact finger arrangement, alsominimizes the fringing effect that occurs with individual cathodecontact pins that cause non-uniform deposition. Alternatively, thecontact portion 208 comprises a plurality of contact pads 217 (as shownin FIG. 7) positioned to contact substantially around the peripheralportion of the substrate deposition surface 214.

[0056] While the cathode clamp ring 210 is engaged with the substrate202, cathode clamp ring 210 rotates with the substrate support member204 because of the frictional force between the contact portion 208 andthe substrate deposition surface 214. Preferably, the cathode clamp ring210 includes a plurality of locking grooves (not shown) disposed on thebottom surface 220 to receive the cathode contacts 216. With the cathodecontacts 216 engaged in the locking grooves, the cathode clamp ring 210rotates synchronously with the substrate support member 204 withoutdepending on the frictional force between the contact portion 208 andthe substrate deposition surface 214.

[0057]FIG. 8 is a partial cross sectional schematic view of anotherembodiment of a cathode clamp ring. In this embodiment, the cathodeclamp ring 210 includes a contact portion 208 comprising a metalimpregnated elastomer ring 350 electrically contacting a peripheralportion of the substrate deposition surface 214. The metal impregnatedelastomer ring 350 is disposed on a ridge 351 on a stepped surface 209of the cathode clamp ring 210. The metal impregnated elastomer ring 350is secured to the stepped surface 209 of the cathode clamp ring 210 byan adhesive that is unaffected by the electroplating solution andprocess. Alternatively, the metal impregnated elastomer ring 350 issecured to the stepped surface 209 of the cathode clamp ring 210 by afastener (not shown) such as a screw or a bolt. As another alternative,the cathode clamp ring 210 includes an annular dove-tail groove (notshown) disposed on the stepped surface 209 that squeezes and holds themetal impregnated elastomer ring 350.

[0058] The metal impregnated elastomer ring 350 provides electricalconduction through metal particles or short wires disposed in ahydrophobic elastomer matrix. FIG. 9 is a cut-away perspective of asection of an embodiment of a metal impregnated elastomer ring 350. Themetal impregnated elastomer ring 350 generally comprises an outerelastomer ring 352, an inner elastomer ring 354 and a metal ring 356sandwiched between the inner elastomer ring 352 and the outer elastomerring 354. Preferably the metal ring 356 comprises a plurality ofindividual metal wires 358 extending at a slanted angle α (other thanperpendicular to a top and/or a bottom surface of the elastomer ring350) from a top surface of the elastomer ring 350 to a bottom surface ofthe elastomer ring 350. The metal wires 358 conduct electrical powerfrom the cathode clamp ring 210 to the substrate deposition surface 214.A top end 357 of the metal wires 358 contacts the cathode clamp ring210, and a bottom end 359 of the metal wires 358 contacts the substratedeposition surface 214. The slanted angle α of the metal wires 358enhances the ability of the metal impregnated elastomer ring 350 tocompress and form a seal on the substrate deposition surface 214 whileproviding electrical contact to the substrate deposition surface 214,i.e., by the individual metal wires sliding relative to each other andincreasing the angle α as needed. One exemplary metal impregnatedelastomer ring is available from Shin-Etsu Handotai America, Inc.,Vancouver, Wash. The metal impregnated elastomer ring 350 provides acompliant contacting interface with the substrate deposition surface 214that reduces the risk of scratching the substrate deposition surface 214by the contact portion 208 of the cathode clamp ring 210. The metalimpregnated elastomer ring 350 also seals the contact interface from theprocess solutions so that the metal conductors in the elastomer matrixare not exposed to the processing solutions which can change theproperties of the metal conductors. Although one embodiment of the metalimpregnated matrix is discussed above, the invention contemplates otherembodiments of metal impregnated elastomers having differentarrangements of electrically conductive particles within the elastomermatrix for use as the contact portion 208 of the cathode clamp ring 210.

[0059]FIG. 10 is a cross sectional partial view of a cathode clamp ringshowing another embodiment of a contact portion of the clamp ring. Inthis embodiment, the contact portion 208 of the cathode clamp ring 210comprises an annular downward extension of the conductive metal from abottom surface 209 of the cathode clamp ring 210. The annular down wardextension is preferably a wedge-shaped annular ring. An inner concentricO-ring 211 and an outer concentric O-ring 213 are attached to the bottomsurface 209 of the cathode clamp ring 210 surrounding the contactportion 208. The O-rings 211 and 213 provide a sealed environment forthe contact portion 208 during the electro-chemical deposition processwhile the contact portion 208 conducts electrical power to the substratedeposition surface 214.

[0060] Referring back to FIG. 8, an alternative embodiment of a supportfor the cathode clamp ring 210 utilizes a kinematic coupling between thecathode clamp ring 210 and the inner terminus 250 of the catch cup 246.Utilizing kinematic coupling allows positive location of concentricparts such as the cathode clamp ring 210 in relation with theelectroplating solution catch cup 246. The kinematic coupling generallycomprises a plurality of ball bearings 361 (only one shown) disposedpartially in a plurality of seats 363 on a top surface of the innerterminus 250 and a corresponding groove 362 on a bottom surface of thecathode clamp ring 210 to receive a top portion of the ball bearing 361.Preferably, the kinematic coupling uses three ball bearings 361 tocenter the cathode clamp ring 210. One ball bearing locates the radialposition while the other two ball bearings locate the angular positionof the clamp ring 210.

[0061] Referring to FIG. 11, where a top view of an electroplatingsolution catch cup 246 is shown, preferably two electroplating solutiondrains 244 are disposed diametrically in opposing corners of theelectro-chemical deposition cell 200. Referring back to FIG. 3 and FIG.4, the electroplating solution catch cup 246 is disposed in a middleportion of the electro-chemical deposition cell 200 to direct theelectroplating solution to one or more electroplating solution drains244. During processing, the electroplating solution is pumped throughthe electroplating solution inlet 240 into the cavity 242, passesthrough the anode plate 230 onto the substrate deposition surface 214(see FIG. 4) and then flows over a cathode clamp ring 210 into anelectroplating solution drain 244 of a catch cup 246. The catch cup 246includes a downwardly sloping top surface 248 from an inner terminus 250to the electroplating solution drain 244 to direct the electroplatingsolution overflowing the cathode clamp ring 210 to the electroplatingsolution drain 244. The size (inner diameter) of the electroplatingsolution drain 244 and the slope and length of the top surface 248 isadapted to accommodate a particular flow rate so that the electroplatingsolution does not overflow the catch cup 246 and spill over the ridge252. The electroplating solution drain 244 is connected to anelectroplating solution outlet 258 that transports the processedelectroplating solution to the electroplating solution reservoir 94. Theelectroplating solution is then pumped to the electroplating solutioninlet 240 and re-circulates through the electro-chemical deposition cell200.

[0062] Referring back to FIG. 3 and FIG. 4, a cavity ring 236 comprisinga generally cylindrical structure is disposed at a top potion of theelectro-chemical deposition cell 200 to hold an anode plate 230 and theelectroplating solution to be distributed through the anode plate 230.The anode plate 230 is disposed at a bottom portion of the cavity ring236 on a ridge 232 extending inwardly from an inner surface 234 of thecavity ring 236. The inner surface 234 of the cavity ring 236 and thetop surface 231 of the anode plate 230 define a cavity 242 for holdingthe electroplating solution to be distributed through the anode plate230. An electroplating solution inlet 240 disposed on the enclosure lid102 supplies the electroplating solution into the cavity 242. Theelectroplating solution inlet 240 is connected to an electroplatingsolution pump 92 that pumps the electroplating solution from anelectroplating solution reservoir 94.

[0063] Preferably, the anode plate 230 has substantially the same shapeas the substrate deposition surface 214 and includes a plurality ofperforations to distribute the electroplating solution uniformly acrossthe substrate deposition surface 214. The anode plate 230 iselectrically connected to a power source 90 and preferably comprises aconsumable metal that can dissolve in the electroplating solution toprovide the metal particles to be deposited onto the substratedeposition surface 214. As the electroplating solution passes through anenergized anode plate 230, metal ions dissociate from the surface of theconsumable metal anode plate 230 into the electroplating solution.

[0064] Alternatively, the anode plate 230 comprises an electrode andconsumable metal particles encased in a fluid permeable membrane such asa porous ceramic plate. An alternative to the consumable anode plate isa non-consumable anode plate that is perforated or porous for passage ofthe electroplating solution therethrough. However, when a non-consumableanode plate is used, the electroplating solution requires a metalparticle supply to continually replenish the metal particles to bedeposited in the process.

[0065] To enhance the deposition process, an agitator 237 is preferablyattached to the cavity ring 236 to agitate the electroplating solution.The agitator 237 generally comprises a megasonic or an ultrasonic fingerthat transfers a vibration to the electroplating solution by vibratingthe cavity ring 236.

[0066] After the electroplating process is finished, no moreelectroplating solution is pumped into the cell 200, and theelectroplating solution is drained from the cell 200 through theelectroplating solution drains 244. However, some electroplatingsolution may collect on the anode plate 230 and the cavity ring 236 andthen drip onto the processed substrate deposition surface 214. Tocontrol dripping of residual electroplating solution from theanode/cavity ring assembly to the substrate deposition surface after thedeposition phase, the anode/cavity ring assembly is preferably movedaway from the region above the substrate.

[0067]FIG. 12 shows one embodiment of the anode/cavity ring assembly fordrip control where a substrate support member 204 is shown positioned ina rinsing position according to the invention. Preferably, the assemblyof the cavity ring 236 and the anode plate 230 comprises two symmetricalhalves split by a central vertical plane. An actuator 237 is connectedto each half to pull apart the anode/cavity ring assembly after thedeposition phase of the process. Each half of the anode/cavity ringassembly is moved to the region above the electroplating solution catchcup 246 so that the residual electroplating solution drips into theelectroplating solution catch cup.

[0068]FIG. 13 is a top view of a shutter plate 238 positioned abovecathode clamp ring 210, showing an alternative solution for controllingthe dripping of residual electroplating solutions from the anode/cavityring assembly. A shutter plate 238 moves into the region between theanode/cavity ring assembly and the cathode clamp ring 210 to block thedripping residual electroplating solution from contaminating theprocessed substrate deposition surface. Preferably, the shutter plate238 is attached to a rotary shutter actuator 239 and retracted into ashutter plate chamber 237 during the deposition process. Once thedeposition phase is completed, the rotary shutter actuator 239 rotatesthe shutter plate 238 below the anode/cavity ring assembly and blocksthe dripping residual electroplating solution.

[0069]FIG. 14 is a side view of an electro-chemical deposition cellhaving a sub-chamber for the anode/cavity ring assembly. Theanode/cavity ring assembly is attached to a rotary assembly actuator 241that moves the anode/cavity ring assembly into a sub-chamber 243 afterthe deposition phase of the process. By moving the anode plate 230 andthe cavity ring 236 into the sub-chamber 243, the residualelectroplating solution drips in the sub-chamber 243 and is preventedfrom contaminating the processed substrate deposition surface.

[0070] A layer of electroplating solution is typically left on theprocessed substrate deposition surface after the deposition phase of theprocess. To remove residual electroplating solution from the processedsubstrate deposition surface, a rinse agent is sprayed over the surface,and then the substrate is spun dry. Referring back to FIG. 3, a rinsingagent reservoir 96 supplies the rinse agent and is connected to a rinseagent manifold 261 through a rinse agent pump 97. One or more rinsespray spouts 260 are connected to the rinse agent manifold 261 to spraya rinse agent, such as deionized water or nitrogen gas, over theprocessed substrate deposition surface.

[0071] Referring now to FIG. 12, a substrate support member 204 is shownpositioned in a rinsing position according to the invention. Preferably,one or more rinse spray spouts 260 are disposed on a bottom surface 262of the inner terminus 250 of the electroplating solution catch cup 246.The rinse spray spouts 260 spray the rinse agent over the processedsubstrate deposition surface 214 after completion of theelectro-chemical deposition process when the substrate support member214 is lowered to a rinsing position. At the rinsing position, thesubstrate support member 204 is positioned below a horizontal planedefined by the rinse spray spouts 260 but above a horizontal planedefined by the tip of a rinse catch cup 264.

[0072]FIG. 15 is a bottom view of an electroplating solution catch cup246 showing three rinse spouts 260 disposed on a bottom surface of theelectroplating solution catch cup 246. Preferably, the rinse spouts 260spray a mist of rinse agents over the processed substrate depositionsurface 214. The rinse agent collect on the processed substratedeposition surface 214 to create a sheeting action of the rinse agentthat removes the residual electroplating solution from the processedsubstrate deposition surface 214. The substrate support member 204 isthen rotated to spin dry the substrate and remove the rinse agent fromthe processed substrate deposition surface 214.

[0073]FIG. 16 is a top view of a rinse catch cup 264. Referring to bothFIG. 12 and FIG. 16, a rinse catch cup 264 is disposed below theelectroplating solution catch cup 246 and extends inwardly from theenclosure side wall 104 of the electro-chemical deposition cell 200 todirect overflowing rinse agents and any residual electroplating solutionto a rinse drain 270. The inner terminus 266 of the rinse catch cup 264defines an opening which outlines the circumference of the substratesupport member 204 and allows the passage of the substrate supportmember 204 therethrough. The rinse catch cup 264 includes a downwardlysloping top surface 268 from the inner terminus 266 to a rinse drain270. The rinse spray spout 260 sprays the rinse agent over the processedsubstrate deposition surface 214 to clean the deposited surface and toremove any excess electroplating solution remaining on the substratedeposition surface 214. As the substrate is spun dry, the rinse agentflows over the deposited substrate surface into the rinse catch cup 264to the rinse drain 270 that drains the rinse agent to a bottom portionof the cell 200. The lower portion of the electro-chemical depositioncell 200 serves as a catch bowl, and an outlet 259 on the enclosurebottom 106 returns the used rinse solution to a purifier 98 and thenback to the rinse solution reservoir 96 to be re-used for subsequentrinses (shown in FIG. 3). The rinse agent is then pumped out of theelectro-chemical deposition cell 200 through an outlet 259 into a rinseagent reservoir 96.

[0074] In operation, a substrate 202 is transferred into theelectro-chemical deposition cell 200 by a robot blade 88 through theslit opening 280 over a substrate support member 204 that is retractedfully. FIG. 3 is a cross sectional schematic view of an electro-chemicaldeposition cell 200 showing a robot blade transferring a substrate 202into the electro-chemical deposition cell 200. A slit valve 282 isopened during the substrate transfer, and a robot blade 88 having asubstrate 202 thereon enters the electro-chemical deposition cell 200through the slit opening 280. The substrate 202 is positioned above thesubstrate support member 204, and the lift pin platform is elevated. Thesubstrate 202 is lift above the robot blade 88 by the lift pins 272 onthe lift pin platform 320 that is elevated by the lift platform actuator326 extending the push rod 327. The robot blade 88 then retracts out ofthe electro-chemical deposition cell 200 and the slit valve 282 closesto seal the processing environment. FIG. 3 is a cross sectionalschematic view of the electro-chemical deposition cell 200 showing asubstrate positioned over a substrate support member 204 and supportedby lift pins 272. The lift platform actuator 326 retracts the push rod327 to lower the lift pin platform 320 and position the substrate 202onto the substrate supporting surface 206 and the outer seal O-ring 298.The vacuum chuck 290 engages the vacuum suction to hold the substrate202 on the substrate supporting surface 206, and the outer seal (O-ring)298 seals the backside of the substrate 202 from the processingchemicals.

[0075] The actuator 346 then elevates the support member 204 to theprocessing position. FIG. 4 is a cross sectional schematic view of anelectro-chemical deposition cell 200 having a substrate 202 disposed ona substrate support member 204 in a processing position according to theinvention. At the processing position, the substrate 202 engages thecathode clamp ring 210, and an electrical power is delivered through thecontact portion 208 of the cathode clamp ring 210 to the substratedeposition surface 214. An electroplating solution is pumped through thesolution inlet 240 at the enclosure top 102 into the cavity ring 236above the anode plate 230. The electroplating solution passes throughthe anode plate 230 onto the substrate deposition surface 214 to deposita metal layer thereon.

[0076] During the deposition process, the rotary actuator 310 rotatesthe substrate support member 204 about a central axis through therotating shaft 306 at between about 10 revolutions per minute (RPM) toabout 50 RPM, and the actuator 346 provides a vibrational agitation tothe substrate support member 204. The rotation and the agitation of thesubstrate support member 204 provide a uniform exposure of theelectroplating solution to the substrate deposition surface 214 andpromote uniform deposition thereon. Deposition uniformity is alsoimproved by the continuous cathode contact provided by the cathode clampring 210 that distributes a uniform current density across the substratedeposition surface 214.

[0077] To enhance filling of high aspect ratio features on the substratedeposition surface, a plate/de-plate scheme is applied during thedeposition phase of the process. The plate/deplate scheme generallycomprises periodic reversal of the electrical current flowing throughthe electroplating solution between the cathode and the anode. Duringthe plating period, the cathode and the anode are biased normally tocause electro-chemical deposition onto the cathode. During the deplatingperiod, the cathode and the anode are reverse biased and the electricalcurrent is reversed to cause de-plating of the deposited surface.However, because a higher electrical current is applied for a shorterduration during the de-plating period, as compared to the platingperiod, the de-plating period removes the crowning or bridging effect atthe mouth of the aperture of high aspect ratio features and enhancesfilling of the feature for the subsequent plating period.

[0078] After the electroplating solution flows over the substratedeposition surface 214, the electroplating solution flows over thecathode clamp ring 210 into the electrolyte catch cup 246. Theelectroplating solution then flows through the electrolyte drain 244 andis pumped out of the electro-chemical deposition cell 200 through outlet258. Preferably, the electroplating solution is re-circulated throughthe electro-chemical deposition cell 200 until the end of the depositionprocess. Then, the electroplating solution is evacuated from theelectro-chemical deposition cell 200 into the electrolyte reservoir 94until the next deposition process. Preferably, as the electroplatingsolution is evacuated, the rotational actuator 310 rotates the substratesupport member 204 at a speed sufficient to spin dry the substratedeposition surface 214 by centrifugal force. The substrate supportmember 204 preferably spins at least about 100 RPM to spin dry thesubstrate 202.

[0079] After the deposition process, the actuator 346 lowers thesubstrate support member 204 to a rinsing position. The substrate 202 ispreferably positioned below a horizontal plane defined by the rinsespray spouts 260 but above a horizontal plane defined by the tip of therinse catch cup 264. The rinse spray spouts 260 spray the rinse agentover the processed substrate deposition surface 214 to clean thedeposited surface and to remove any excess electroplating solutionremaining on the substrate deposition surface 214. To end the rinseprocess, the substrate support member 204 rotates at a speed at leastabout 100 RPM to spin dry the substrate deposition surface 214 throughcentrifugal force. The rinse agent is drained through the rinse drain270 to the bottom of the cell 200 and pumped out of the cell 200 throughoutlet 259 into a rinse agent reservoir 96.

[0080] After the rinse process, the actuator 346 retracts fully andlowers the substrate support member 204 to the transfer position asshown in FIG. 3. The vacuum chuck 290 disengages the vacuum suction andreleases the substrate 202, and the lift platform actuator 326 extendsthe push rod 327 to elevate the lift pin platform 320 and the lift pins272 to lift the processed substrate 202 above the substrate supportsurface 206. As the lift pins 272 lift the substrate 202 above thesubstrate support surface 206, a blow-off gas is pumped through thevacuum chuck 290 out of the vacuum port 294 to provide a gas flowdirected at the backside edge of the substrate 202. The blow-off gasprevents any remaining rinse agent from contaminating the backside 215of the substrate 202. The slit valve 282 opens, and the robot blade 88extends into the electro-chemical deposition cell 200 through the slit280. The robot blade 88 is positioned under the elevated substrate 202,and the lift pins 272 are lowered to position the substrate 202 onto therobot blade 88. The robot blade 88 then retracts out of theelectro-chemical deposition cell 200 with the processed substrate, andthe process repeats for the next unprocessed substrate.

[0081] While the foregoing is directed to the preferred embodiment ofthe present invention, other and further embodiments of the inventionmay be devised without departing from the basic scope thereof. The scopeof the invention is determined by the claims which follow.

1. A method for electroplating a metal onto a substrate plating surface,comprising: a) holding a substrate with the substrate plating surfaceface-up on a rotatable substrate support member having means for holdingand rotating the substrate during an electroplating process; b)electrically contacting a cathode clamp ring to the substrate platingsurface; c) positioning an anode above the substrate plating surface;and d) flowing an electroplating solution from the anode to thesubstrate plating surface, wherein an electrical contact to the cathodeclamp ring is isolated from a region between the substrate supportmember and the anode.
 2. The method of claim 1 wherein the step ofholding the substrate comprises providing a vacuum suction between thesubstrate support member and a back side of the substrate.
 3. The methodof claim 1, wherein the step of holding the substrate further comprisesproviding a peripheral seal between the substrate support member and aback side of the substrate.
 4. The method of claim 1, wherein the stepof electrically contacting the cathode clamp ring to the substratesurface comprises contacting a peripheral portion of the substratesurface with a contact portion of the clamp ring.
 5. The method of claim3, wherein the contact portion is an annular portion.
 6. The method ofclaim 1, wherein the anode is perforated for flow of the electroplatingsolution there through.
 7. The method of claim 1, wherein the anode is aconsumable anode.
 8. The method of claim 1, further comprising rotatingthe substrate while flowing an electroplating solution from the anode tothe substrate plating surface.
 9. The method of claim 1, furthercomprising vibrating the substrate while flowing an electroplatingsolution from the anode to the substrate plating surface.
 10. The methodof claim 1, wherein the electroplating solution is pumped from anelectroplating solution reservoir.
 11. The method of claim 9, furthercomprising draining the electroplating solution back to theelectroplating solution reservoir.
 12. The method of claim 11, furthercomprising rinsing the substrate plating surface with a rinse agent. 13.The method of claim 12, wherein the step of rinsing the substrateplating surface comprises spraying a rinse agent over the substrateplating surface.
 14. The method of claim 12, wherein the rinse agent ispumped from a rinse agent reservoir to a rinse spray spout.
 15. Themethod of claim 12, further comprising draining the rinse agent back tothe rinse agent reservoir.
 16. The method of claim 12, furthercomprising purifying the rinse agent in a purifier.
 17. The method ofclaim 12, further comprising spin-drying the substrate.
 18. The methodof claim 1, further comprising supplying the electroplating solutioninto a cavity ring disposed above the anode.
 19. The method of claim 18,further comprising moving the cavity ring while flowing theelectroplating solution.
 20. An apparatus for electroplating a metalonto a substrate plating surface, comprising: a) an enclosure having ananode disposed at an upper portion thereof and a substrate supportmember disposed at a bottom portion thereof, the support member capableof holding a substrate with the substrate plating surface face-up androtating the substrate during an electroplating process; b) a cathodeclamp ring having an annular contact portion to electrically contact aperipheral portion of the substrate plating surface; c) a catch cupextending from an interior surface of the enclosure to a bottom surfaceof the cathode clamp ring; d) one or more rinse spray spouts disposedbelow the catch cup; and e) a rinse agent reservoir; and f) a rinsecatch cup disposed below the rinse spray spouts, the rinse catch cupextending from the inner surface of the enclosure and forming an innerterminus that allows movement of the substrate support membertherethrough.
 21. The apparatus of claim 20, wherein the rinse catch cupincludes a rinse drain.
 22. The apparatus of claim 20, furthercomprising an outlet connected to the rinse drain.
 23. The apparatus ofclaim 22, further comprising a purifier connected between the outlet andthe rinse agent reservoir.
 24. The apparatus of clam 20, wherein therinse catch cup is disposed within the enclosure below the catch cup.25. The apparatus of claim 20, wherein the substrate support member isvertically moveable within the enclosure.
 26. A method forelectroplating a metal onto a substrate plating surface, comprising:positioning the substrate plating surface face-up on a support member;locating the support member having the substrate plating surfacedisposed thereon in a plating position; electrically contacting acathode clamp ring to the substrate plating surface; flowing anelectroplating solution from an anode to the substrate plating surfacewhile rotating the substrate plating surface; locating the supportmember having the substrate plating surface disposed thereon in arinsing position; and rinsing the substrate plating surface with a rinseagent.
 27. The method of claim 26, further comprising spin-drying thesubstrate plating surface.
 28. The method of claim 26, furthercomprising draining the electroplating solution to an electroplatingsolution reservoir.
 29. The method of claim 26, further comprisingdraining the rinse agent to a rinse drain and purifying the rinse agent.